Display apparatus and method of manufacturing the same

ABSTRACT

Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a substrate, a first conductive layer disposed on the substrate, and a first insulating pattern disposed on the first conductive layer. The first insulating pattern includes a fluorine compound and a nitrogen compound. The nitrogen compound is represented by Formula 1:NR1R2R3OH  &lt;Formula 1&gt;wherein in Formula 1, R1 to R3 are each independently selected from hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C6-C30 aryl group, and a substituted or unsubstituted C7-C30 aralkyl group.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This is a divisional application of U.S. patent application Ser. No.16/895,614 filed Jun. 8, 2020 (now pending), the disclosure of which isincorporated herein by reference in its entirety. U.S. patentapplication Ser. No. 16/895,614 claims the priority to and benefits ofKorean Patent Application No. 10-2019-0143933 under 35 U.S.C. § 119,filed on Nov. 12, 2019 in the Korean Intellectual Property Office(KIPO), the entire contents of which are incorporated herein byreference.

BACKGROUND 1. Technical Field

Embodiments of the disclosure relate to a display apparatus, and to adisplay apparatus that is capable of preventing or reducing thedeterioration of image quality during a manufacturing process or use.

2. Description of the Related Art

Display apparatuses have been diversified in use. In recentdevelopments, the thickness of the display apparatuses is smaller andthe weight thereof is lighter, and thus, they are used in a wider rangeof use. For example, the use of display apparatuses is expanding to notonly small devices such as MP3 players and mobile phones, but alsomedium and large devices such as big-screen televisions.

In addition, there has been research and development of foldable orrollable display apparatuses. To this end, it is desirable to improvethe flexibility of substrates of display apparatuses.

SUMMARY

Embodiments of the disclosure provide a display apparatus that iscapable of preventing or reducing the deterioration of image qualityduring a manufacturing process or use and a method of manufacturing thesame.

Technical objectives to be achieved by the disclosure are not limited tothe above-mentioned embodiments, and other technical objectives whichhave not been described will be clearly understood by those skilled inthe art from the description of the disclosure.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments of the disclosure.

In one embodiment, a display apparatus may include a substrate, a firstconductive layer disposed on the substrate, and a first insulatingpattern disposed on the first conductive layer, wherein the firstinsulating pattern includes a fluorine compound.

In one embodiment, concentration of the fluorine compound may be reducedfrom a first surface of the first insulating pattern to a second surfaceof the first insulating pattern, and the first surface faces the secondsurface.

In one embodiment, the second surface of the first insulating pattern isin contact with the conductive layer.

In one embodiment, the first insulating pattern may further include anitrogen compound.

In one embodiment, the nitrogen compound may be represented by Formula1.NR₁R₂R₃OH  <Formula 1>

In Formula 1, R₁ to R₃ may each independently be selected from hydrogen,a substituted or unsubstituted C₁-C₂₀ alkyl group, a substituted orunsubstituted C₆-C₃₀ aryl group, and a substituted or unsubstitutedC₇-C₃₀ aralkyl group.

In one embodiment, concentration of the nitrogen compound may be reducedfrom a first surface of the first insulating pattern to a second surfaceof the first insulating pattern, wherein the first surface faces thesecond surface.

In one embodiment, the first insulating pattern may further include anitrogen compound and a first material, and the first material may bedifferent from the fluorine compound and the nitrogen compound.

In one embodiment, the first insulating pattern consists essentially ofthe first material.

In one embodiment, the first material may be an alkali soluble polymer.

In one embodiment, the first material may be a siloxane-based polymer.

In one embodiment, the first insulating pattern includes a first regionand a second region, the second region may be between the firstconductive layer and the first region, and an amount of the firstmaterial in the first region may be greater than an amount of the firstmaterial in the second region.

In one embodiment, a ratio of the amount of the fluorine compound in thefirst region to the amount of the fluorine compound in the second regionmay be from about 10:1 to about 10,000:1.

In one embodiment, a ratio of the thickness of the first region to thethickness of the second region may be from about 1:10 to about 1:1,000.

In one embodiment, the first conductive layer may include molybdenum,aluminum, titanium, neodymium, copper, or a combination thereof.

In one embodiment, the display apparatus may further include a pixelelectrode that is disposed on the first insulating pattern andelectrically connected to the first conductive layer.

In one embodiment, the first insulating pattern may include an openingthat exposes a portion of the first conductive layer, and the pixelelectrode may contact the first conductive layer through the opening.

In one embodiment, a portion of the first conductive layer exposed bythe opening may include molybdenum.

In one embodiment, the display apparatus may further include a secondinsulating pattern disposed on the pixel electrode and contacts thefirst insulating pattern outside the pixel electrode.

In one embodiment, the first insulating pattern may include a firstmaterial, the second insulating pattern may include a second material,and the first material and the second material may comprise a samematerial.

In one embodiment, a method of manufacturing a display apparatusincludes forming a first conductive layer on a substrate, forming apreliminary first insulating pattern on the first conductive layer,forming a first insulating pattern by developing with a first solution,and treating the first insulating pattern with a second solution,wherein the first solution includes a nitrogen compound and the secondsolution includes HF.

In one embodiment, the method may further include, prior to thetreating, forming a pixel electrode on the first insulating patternwherein the pixel electrode may be electrically connected to the firstconductive layer.

In one embodiment, the method may further include, after the treating,forming a pixel electrode on the first insulating pattern wherein thepixel electrode is electrically connected to the first conductive layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of certainembodiments of the disclosure will be more apparent from the followingdescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a schematic perspective view showing a display apparatusaccording to an embodiment;

FIG. 2 is a schematic cross-sectional view showing a display apparatusaccording to an embodiment;

FIGS. 3 to 5 are schematic cross-sectional views illustrating a methodof manufacturing a display apparatus according to an embodiment;

FIG. 6 is a schematic block diagram showing the structure of anelectronic device apparatus according to an embodiment; and

FIGS. 7A and 7B are schematic perspective views showing an electronicdevice according to an embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the embodiments, examples ofwhich are illustrated in the accompanying drawings, wherein likereference numerals refer to like elements throughout. In this regard,the embodiments may have various modifications and different forms andshould not be construed as being limited to the descriptions set forthherein. Rather, all modifications, equivalents, and substituents whichare included in the spirit and technical scope of the invention shouldbe included. Accordingly, the embodiments are merely described below, byreferring to the figures, to explain aspects of the description.

Hereinafter, embodiments of the disclosure will be described in detailwith reference to the accompanying drawings. The same or correspondingcomponents will be denoted by the same reference numerals, and thusredundant description thereof will be omitted.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Throughout the disclosure,the expression “at least one of a, b or c” may indicate only a, only b,only c, both a and b, both a and c, both b and c, all of a, b, and c, orvariations thereof.

It will be understood that although the terms “first,” “second,” etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another.

As used herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be further understood that the terms “contains,” “containing,”“includes,” “including,” “comprises,” and/or “comprising” used hereinspecify the presence of stated features or components, but do notpreclude the presence or addition of one or more other features orcomponents.

It will be understood that when a layer, region, or component isreferred to as being “on” or “onto” another layer, region, or component,it may be directly or indirectly formed on the other layer, region, orcomponent. For example, intervening layers, regions, or components maybe present. It will also be understood that when a layer, region, orcomponent is referred to as being “directly on” or “directly onto”another layer, region, or component, it may be directly formed on theother layer, region, or component, and intervening layers, regions, orcomponents may not be present.

Sizes of elements in the drawings may be exaggerated for convenience ofexplanation. In other words, since sizes and thicknesses of componentsin the drawings are arbitrarily illustrated for convenience ofexplanation, the following embodiments of the disclosure are not limitedthereto.

When an embodiment is implementable otherwise, a particular processorder may be performed differently from the order described. Forexample, two processes described in succession may be performedsubstantially simultaneously or in a reverse order.

It will be understood that when a layer, region, or component isreferred to as being “connected to” another layer, region, or component,the layer, region, or component may be directly connected to the anotherlayer, region, or component, or indirectly connected to the anotherlayer, region, or component as intervening layer, region, or componentis present. For example, it will be understood that when a layer,region, or component is referred to as being “electrically connected to”another layer, region, or component, the layer, region, or component maybe directly electrically connected to the another layer, region, orcomponent, or indirectly electrically connected to the another layer,region, or component as intervening layer, region, or component ispresent.

The term “C₁-C₂₀ alkyl group” as used herein refers to a linear orbranched aliphatic saturated hydrocarbon monovalent group having 1 to 20carbon atoms, and examples thereof include a methyl group, an ethylgroup, a propyl group, an isobutyl group, a sec-butyl group, atert-butyl group, a pentyl group, an isoamyl group, and a hexyl group.

The term “C₃-C₁₀ cycloalkyl group” as used herein refers to a monovalentsaturated hydrocarbon monocyclic group having 3 to 10 carbon atoms, andexamples thereof include a cyclopropyl group, a cyclobutyl group, acyclopentyl group, a cyclohexyl group, and a cycloheptyl group.

The term “C₆-C₃₀ aryl group” as used herein refers to a monovalent grouphaving a carbocyclic aromatic system having 6 to 30 carbon atoms.Examples of the C₆-C₃₀ aryl group include a phenyl group, a naphthylgroup, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, anda chrysenyl group. When the C₆-C₃₀ aryl group includes two or morerings, the rings may be fused to each other.

The term “C₇-C₃₀ aralkyl group” as used herein refers to a group having7 to 30 carbon atoms in which the alkyl group is substituted with thearyl group. Examples of the C₇-C₆₀ aralkyl group include a benzyl group.

FIG. 1 is a schematic perspective view showing a display apparatus 1according to an embodiment.

Referring to FIG. 1 , the display apparatus 1 includes a display area DAand a non-display area NDA outside the display area DA. In the displayarea DA, various display devices such as an organic light-emittingdevice (OLED) may be positioned or disposed. In the non-display areaNDA, various wires through which electrical signals are transmitted tothe display area DA may be positioned or disposed.

Although FIG. 1 illustrates the display apparatus 1 including arectangular display area DA, the invention is not limited thereto. Theshape of the display area DA may be a circle, an ellipse, or a polygonsuch as a triangle or a pentagon.

Although the display apparatus 1 of FIG. 1 is a display apparatus havinga flat shape, the display apparatus 1 may be implemented in variousforms such as a curved display apparatus, a flexible display apparatus,a foldable display apparatus, and a rollable display apparatus.

Hereinafter for convenience, an organic light-emitting display apparatuswill be described as an example of the display apparatus 1 according toan embodiment, but the display apparatus according to the disclosure isnot limited thereto. In one or more embodiments, various other displayapparatuses, such as an inorganic light-emitting display apparatus or aquantum dot light-emitting display apparatus, may instead be used.

FIG. 2 is a schematic cross-sectional view showing the display apparatus1 according to an embodiment.

Referring to FIG. 2 , the display apparatus 1 according to an embodimentincludes a substrate 100, a first conductive layer 160 disposed on thesubstrate 100; and a first insulating pattern 170 disposed on the firstconductive layer 160.

The substrate 100 may include various materials, such as glass, metal,metal oxide, metal nitride, or plastic. For example, the substrate 100may include polyethersulfone, polyacrylate, polyetherimide, polyethylenenapthalate, polyethyeleneterepthalate, polyphenylene sulfide,polyarylate, polyimide, polycarbonate, cellulose acetate propionate, orthe like.

The substrate 100 may be flexible, rollable, or bendable. The substrate100 may have a multi-layered structure, and layers constituting themultilayer structure may have different materials.

A buffer layer 110 may be disposed on the substrate 100 to planarize thetop surface of the substrate 100 and to block impurities from flowingfrom the substrate 100. The buffer layer 110 may have a single-layeredstructure or a multi-layered structure, each structure including aninorganic material such as silicon nitride (SiN_(x)) and/or siliconoxide (SiO_(x)). The buffer layer 110 may be omitted.

An activation layer 120 may be disposed on the buffer layer 110. Theactivation layer 120 may include organic semiconductors, inorganicsemiconductors, and/or silicon semiconductors.

A first insulating layer 130 may be disposed on the activation layer120, and a gate electrode 140 may be disposed on the first insulatinglayer 130.

The first insulating layer 130 may include at least one insulating filmselected from SiO₂, SiN_(x), SiON, Al₂O₃, TiO₂, Ta₂O₅, HfO₂, ZrO₂, BST,and PZT in the form of a single layer or multiple layers. The firstinsulating layer 130 may be an inorganic insulating film.

The gate electrode 140 may include aluminum (Al), platinum (Pt),palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni),neodymium (Nd), iridium (Ir), and chromium (Cr), lithium (Li), calcium(Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), or anycombination thereof, in the form of a single layer or multiple layers.The gate electrode 140 may be connected to a gate line through which anelectrical signal is applied thereto.

The first conductive layer 160 and/or a second conductive layer 161 maybe disposed on the gate electrode 140 with a second insulating layer 150therebetween. The first conductive layer 160 and/or the secondconductive layer 161 may be electrically connected to the activationlayer 120 through contact holes formed in the second insulating layer150 and the first insulating layer 130.

The first conductive layer 160 may include aluminum (Al), platinum (Pt),palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni),neodymium (Nd), iridium (Ir), and chromium (Cr), lithium (Li), calcium(Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), or anycombination thereof, in the form of a single layer or multiple layers.For example, the first conductive layer 160 may have a three-layeredMo/Al/Mo, Mo/Al/Ti, or Ti/Al/Ti structure. In an embodiment, the firstconductive layer 160 may include a Mo/Al/Ti structure. The compositionand structure of the second conductive layer 161 may be understood byreferring to the description of the first conductive layer 160.

The first insulating pattern 170 may be disposed on the secondinsulating layer 150.

In one embodiment, the first insulating pattern 170 may include afluorine compound.

In one embodiment, the concentration of the fluorine compound may bereduced from a first surface of the first insulating pattern 170 to asecond surface of the first insulating pattern 170, wherein the firstsurface faces the second surface.

The first insulating pattern 170 may be formed from a preliminary firstinsulating pattern and developing the same with an alkaline solutioncontaining a nitrogen compound. A residual amount of the nitrogencompound may remain in the first insulating pattern 170, which mayreduce the lifespan of a display apparatus. To minimize residualnitrogen compounds, a treatment is performed thereon with a solutioncontaining HF. Due to the HF used in the treatment, fluorine compoundsderived from HF may be included in the first insulating pattern 170.Although the amount of the fluorine compound is not limited, the amountof the fluorine compound included therein may be substantially zero or arelatively small amount. Although the amount of the nitrogen compound isnot limited, the amount of the nitrogen compound included therein may besubstantially zero or a relatively small amount.

For example, the amount of the fluorine compound in the first insulatingpattern 170 may be less than about 1 wt %.

In one or more embodiments, the amount of the fluorine compound in thefirst insulating pattern 170 may be less than or equal to about 0.5 wt%.

In one embodiment, the first insulating pattern 170 may further includea nitrogen compound.

For example, the amount of the nitrogen compound in the first insulatingpattern 170 may be less than about 1 wt %.

In one or more embodiments, the amount of the nitrogen compound in thefirst insulating pattern 170 may be less than or equal to about 0.5 wt%.

In one embodiment, the concentration of the nitrogen compound may bereduced from a first surface of the first insulating pattern 170 to theother a second surface of the first insulating pattern 170, wherein thefirst surface faces the second surface.

As described above, since the fluorine compound is derived from the HFcontained in the solution used for the treatment, the concentration ofthe fluorine compound may be the highest on the surface of the firstinsulating pattern 170 which is in direct contact with the solution. Inone embodiment, the concentration of the fluorine compound may bereduced from a first surface of the first insulating pattern 170 to asecond surface of the first insulating pattern 170, wherein the firstsurface faces the second surface. The second surface of the firstinsulating pattern 170 may be in contact with the first conductive layer160.

In one embodiment, the first insulating pattern 170 may not include thenitrogen compound. Herein, the absence of the nitrogen compound mayindicate that the nitrogen compound is included in the first insulatingpattern 170 in an amount that is less than the detection limit ofdetection equipment.

The nitrogen compound may be represented by Formula 1:NR₁₁R₁₂R₁₃OH  <Formula 1>

In Formula 1, R₁₁ to R₁₃ may each independently be selected fromhydrogen, a substituted or unsubstituted C₁-C₂₀ alkyl group, asubstituted or unsubstituted C₆-C₃₀ aryl group, and a substituted orunsubstituted C₇-C₃₀ aralkyl group.

For example, R₁₁ to R₁₃ in Formula 1 may each independently be selectedfrom hydrogen, a methyl group, an ethyl group, an n-propyl group, aniso-propyl group, an n-butyl group, an iso-butyl group, a sec-butylgroup, a tert-butyl group, and a benzyl group.

In one or more embodiments, the nitrogen compound may betetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide(TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammoniumhydroxide (TBAH), benzyltrimethylammonium hydroxide,benzyltriethylammonium hydroxide, or any combination thereof.

The first insulating pattern 170 may further include the nitrogencompound and a first material, wherein the first material is differentfrom the fluorine compound and the nitrogen compound. In an embodiment,the first insulating pattern 170 may consist essentially of the firstmaterial. Herein, the phrase “consist essentially of the first material”may indicate that the nitrogen compound and the fluorine compound areincluded in the first insulating pattern 170 in amounts that are lessthan the detection limit of detection equipment.

For example, the amount of the first material in the first insulatingpattern 170 may be greater than or equal to about 98 wt %. In one ormore embodiments, the amount of the first material in the firstinsulating pattern 170 may be greater than about 99 wt %.

The first material may be an alkali soluble polymer. In one embodiment,the first material may be a siloxane-based polymer, but embodiments ofthe disclosure are not limited.

For example, the first material may include a repeating unit representedby Formula 2, but embodiments of the disclosure are not limited:

In Formula 2,

-   -   L₂₁ and L₂₂ may each independently be C(R₂₃)(R₂₄) or O—Si—O,    -   a21 and a22 may each independently be 0, 1, 2, or 3,    -   X₂₁ may be O or O—Si—O,    -   b21 may be 1, 2, or 3, and    -   R₂₁ to R₂₄ may each independently be selected from hydrogen, a        hydroxyl group, a substituted or unsubstituted C₁-C₂₀ alkyl        group, a substituted or unsubstituted C₃-C₁₀ cycloalkyl group, a        substituted or unsubstituted C₆-C₃₀ aryl group, and a        substituted or unsubstituted C₇-C₃₀ aralkyl group.

In one embodiment, the first material may have an average molecularweight of about 1,000 to about 15,000, but embodiments of the disclosureare not limited thereto. In one embodiment, the first material may havea weight average molecular weight of about 1,000 to about 10,000.

As described above, since the nitrogen compound is included in adeveloper, the concentration of the nitrogen compound may be the higheston the surface of a preliminary first insulating pattern which is indirect contact with the developer. In one embodiment, the concentrationof the nitrogen compound may be reduced from a first surface of thefirst insulating pattern 170 to a second surface of the first insulatingpattern 170, where the first surface faces the second surface. Thesecond surface of the first insulating pattern 170 may be in contactwith the first conductive layer 160.

For example, the first insulating pattern 170 may include a first regionand a second region. The second region may be between the firstconductive layer 160 and the first region, and the amount of the firstmaterial in the first region may be greater than the amount of the firstmaterial in the second region.

In one embodiment, the ratio of the amount of the fluorine compound inthe first region to the amount of the fluorine compound in the secondregion may be from about 10:1 to about 10,000:1, but embodiments of thedisclosure are not limited thereto.

The ratio of the thickness of the first region to the thickness of thesecond region may be from about 1:10 to about 1:1,000, but embodimentsof the disclosure are not limited. A surface of the second region maycontact the first conductive layer 160.

In one embodiment, the ratio of the amount of the nitrogen compound inthe first region to the amount of the nitrogen compound in the secondregion may be from about 10:1 to about 10,000:1, but embodiments of thedisclosure are not limited thereto.

The ratio of the thickness of the first region to the thickness of thesecond region may be from about 1:10 to about 1:1,000, but embodimentsof the disclosure are not limited. The surface of the second region maycontact the first conductive layer 160.

In one embodiment, the first insulating pattern 170 may have a firstopening that exposes a portion of the first conductive layer 160, and apixel electrode 180 may contact the first conductive layer 160 throughthe first opening of the first insulating pattern 170. In oneembodiment, the portion of the first conductive layer 160 exposed by thefirst opening may include molybdenum (Mo). In one embodiment, the firstconductive layer 160 may have a Mo/Al/Ti structure, and the portion ofthe first conductive layer 160 exposed by the first opening may includeMo. Since Mo has a relatively high resistance to HF (for example, higherresistance to HF than Ti), even though the first conductive layer 160 isexposed to HF during the manufacture of the display apparatus 1, thedeterioration of the display apparatus 1 may be relatively small orabsent.

When an organic light-emitting device OLED is a top emission typelight-emitting device, the pixel electrode 180 may be formed as areflective electrode. The reflective electrode may include Ag, Mg, Al,Pt, Pd, Au, Ni, Nd, Ir, Cr, or any combination thereof in the form of asingle layer or multiple layers. For example, the reflective electrodemay include a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd,Ir, Cr, or any combination thereof, and a transparent orsemi-transparent electrode layer formed on the reflective layer.

When the organic light-emitting device OLED is a bottom emission typelight-emitting device, the pixel electrode 180 may include a transparentmaterial such as ITO, IZO, ZnO, or In₂O₃, and may be formed as atransparent or semi-transparent electrode. For example, the pixelelectrode 180 may have a stacked structure of ITO/Ag/ITO.

A second insulating pattern 191 may be disposed on the pixel electrode180 and may contact the first insulating pattern 170 outside the pixelelectrode 180. The second insulating pattern 191 may have a secondopening exposing a portion of the pixel electrode 180, for example, acenter portion thereof. As a result, a light-emitting area is defined ina pixel.

The second insulating pattern 191 may include a siloxane-based polymer,an imide polymer, an amide polymer, an olefin polymer, an acrylicpolymer, a phenol polymer, or any combination thereof.

In one embodiment, the first insulating pattern 170 may include thefirst material, the second insulating pattern 191 may include a secondmaterial, and the first material and the second material may comprise asame material. In one embodiment, the first material may be identical tothe second material. In one embodiment, the first material and thesecond material may each be a siloxane-based polymer, but embodiments ofthe disclosure are not limited. On the cross-section of the displayapparatus 1, a boundary between the first insulating pattern 170 and thesecond insulating pattern 191 may be substantially absent or notobserved.

The organic light-emitting device OLED may include the pixel electrode180 disposed on the first insulating pattern 170, an opposite electrode210 facing the pixel electrode 180, and a middle layer 200 between thepixel electrode 180 and the opposite electrode 210.

The middle layer 200 includes an emission layer that emits light, and atleast one functional layer selected from a hole injection layer (HIL), ahole transport layer (HTL), an electron transport layer (ETL), and anelectron injection layer (EIL). However, the embodiment is not limitedthereto, and various other functional layers may be disposed on thepixel electrode 180.

The emission layer may be a red emission layer, a green emission layer,or a blue emission layer. In one or more embodiments, the emission layermay have a multi-layered structure in which a red emission layer, agreen emission layer, and a blue emission layer are stacked to emitwhite light, or may have a single-layered structure including a redlight-emitting material, a green light-emitting material, and a bluelight-emitting material.

In one embodiment, the middle layer 200 may be provided only to anemission area AA by using a mask having an opening corresponding to theemission area AA of the display apparatus 1, for example, a fine metalmask (FMM).

In one or more embodiments, the emission layer of the middle layer 200is provided only to the emission area AA by using an FMM having anopening corresponding to the emission area AA of the display apparatus1, and the other functional layers thereof may be provided to theemission area AA and a non-emission area NAA by using an open mask.

The opposite electrode 210 may be disposed on the middle layer 200. Theopposite electrode 210 may be a reflective electrode, a transparentelectrode, or a semi-transparent electrode. For example, the oppositeelectrode 210 may include a metal having a small work function, and mayinclude Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, or any combination thereof.

Although not shown in FIG. 2 , an opposite substrate may be furtherprovided on the opposite electrode 210. The opposite substrate may beunderstood by referring to the description provided in connection withthe substrate 100.

Although not shown in FIG. 2 , a black matrix BM and a color filter CFmay be disposed on a surface of the opposing substrate facing thesubstrate 100. The color filter CF may be arranged to correspond to theemission area AA of the display apparatus 1. The black matrix BM may bedisposed to correspond to a region other than the emission area AA ofdisplay apparatus 1.

Although not shown in FIG. 2 , a protective layer may be disposedbetween the opposite substrate and the opposite electrode 210. Theprotective layer may include an inorganic film and/or an organic film inthe form of one or more layers.

Although not shown in FIG. 2 , various functional layers may be furtherprovided on the opposite substrate. For example, a functional layer maybe an anti-reflection layer that minimizes reflection on the uppersurface of the opposite substrate, or an anti-fouling layer thatprevents contamination, such as marks made by the hands of a user (forexample, fingerprints).

In one or more embodiments, instead of the opposite substrate, a thinfilm encapsulation layer may be disposed on the substrate 100. The thinfilm encapsulation layer may include an inorganic encapsulation layerincluding at least one inorganic material and an organic encapsulationlayer including at least one organic material. In one or moreembodiments, the thin film encapsulation layer may have a stackedstructure of a first inorganic encapsulation layer/an organicencapsulation layer/a second inorganic encapsulation layer.

Hereinafter, a method of manufacturing the display apparatus 1 will bedescribed with reference to FIGS. 3 to 5 . FIGS. 3 to 5 are schematiccross-sectional views illustrating a method of manufacturing the displayapparatus 1 according to an embodiment.

Referring to FIGS. 3 to 5 , a method of manufacturing the displayapparatus 1 according to an embodiment includes: providing the substrate100; forming a first conductive layer 160 disposed on the substrate 100;forming a preliminary first insulating pattern 170A on the firstconductive layer 160; forming a first insulating pattern 170 bydeveloping with a first solution; and treating the first insulatingpattern 170 with a second solution, wherein the first solution includesa nitrogen compound and the second solution includes HF.

For example, the first conductive layer 160 may be formed by a dryprocess. Materials included in the first conductive layer 160 are thesame as described above.

For example, the preliminary first insulating pattern 170A may be formedby spin coating or screen printing a composition including the firstmaterial.

In one embodiment, the preliminary first insulating pattern 170A may beexposed through a mask having an opening prior to the development usingthe first solution. As a light source used for the exposure, a lowpressure mercury lamp, a high pressure mercury lamp, an ultra highpressure mercury lamp, a metal halide lamp, an argon gas laser, etc. maybe used, and ultraviolet rays, an X-ray, an electron beam, etc. may alsobe used. The exposure intensity depends on the type of componentsincluded in the preliminary first insulating pattern 170A, the mixedratio of the components, and a dry-film thickness thereof. For example,the exposure intensity may be from about 10 mW/cm³ to about 50 mW/cm³(by a 365 nm sensor), and the irradiation time may be from about 5seconds to about 1 minute, but embodiments of the disclosure are notlimited thereto.

The developing is performed using the first solution to form the firstinsulating pattern 170. The nitrogen compound in the first solution maybe understood to be the same as described above, and may be an alkalineaqueous solution. The amount of the nitrogen compound in the firstsolution may be from about 0.1 wt % to about 5 wt %. In one embodiment,the amount of the nitrogen compound in the first solution may be fromabout 2 wt % to about 3 wt %. However, embodiments of the disclosure arenot limited thereto.

The first insulating pattern 170 may be cured. The curing method may bethermosetting or photocuring, and is not specifically limited thereto.In one embodiment, the first insulating pattern 170 may be thermallycured at about 200° C. to about 270° C. By curing the first insulatingpattern 170, the heat resistance, light resistance, adhesion, crackresistance, chemical resistance, strength, storage stability, and thelike of the first insulating pattern 170 may be improved.

In one embodiment, a residue may be removed by dry etching. When thefirst insulating pattern 170 is formed by developing using the firstsolution, the first insulating pattern 170 may be left undesirably onthe first conductive layer 160. Dry etching may be performed to removethe residues that may remain on the first conductive layer 160. Dryetching may be performed using oxygen (O₂) gas or CF₄ gas, butembodiments of the disclosure are not limited.

The second solution may be used for a treatment. Since the treatment isperformed using the second solution, the first insulating pattern 170may not include the nitrogen compound, or the amount of the nitrogencompound in the first insulating pattern may be less than about 1 wt %.As a result, the deterioration of the display apparatus 1 when thetreatment is performed with the second solution may be relatively lowerthan that when the treatment with the second solution is not performed.

In one embodiment, when the display apparatus 1 is treated with thesecond solution, the lifespan thereof may be increased to at least twicethat of the display apparatus 1 when the treatment using the secondsolution is not performed. The HF of the second solution may inhibit ahydrogen bond that may be formed between the first material and thenitrogen compound in the first insulating pattern 170. As a result, theconcentration of the nitrogen compound in the first insulating pattern170 may be lowered. As an example, when the preliminary first insulatingpattern 170A is a siloxane-based polymer, the surface of the preliminaryfirst insulating pattern 170A may have an OH group. When thesiloxane-based polymer is treated with the first solution including anitrogen compound having an OH group such as TMAH, a hydrogen bond maybe formed between the OH group of the siloxane-based polymer and the OHgroup of TMAH. When the resultant structure is treated with the secondsolution containing HF, the hydrogen bond may be inhibited, andaccordingly, the concentration of the nitrogen compound in the firstinsulating pattern 170 may be lowered.

For example, the second solution may include a buffer oxide etchant(BOE), but embodiments of the disclosure are not limited thereto.

In one embodiment, the method may further include, prior to thetreating, forming the pixel electrode 180 that is disposed on the firstinsulating pattern 170 and is electrically connected to the firstconductive layer 160. In this embodiment, since the first conductivelayer 160 is not substantially exposed to the second solution, thematerial included in the first conductive layer 160 is not limited.

In one embodiment, the method may further include, after the treating,forming the pixel electrode 180 that is disposed on the first insulatingpattern 170 and is electrically connected to the first conductive layer160. In this embodiment, since a portion of the first conductive layer160 is exposed to the second solution, the material included in thefirst conductive layer 160 may have a relatively high resistance to HF.In one embodiment, the portion of the first conductive layer 160 exposedby the first opening may include molybdenum (Mo).

The display apparatus 1 may be embodied as an electronic device 1000,such as a mobile phone, a video phone, a Smartphone, a smart pad, asmart watch, a tablet PC, a laptop computer, a computer monitor, atelevision, a digital broadcasting terminal, a personal digitalassistant (PDA), a portable multimedia player (PMP), a head mounteddisplay (HMD), a vehicle navigation apparatus, or the like.

FIG. 6 is a schematic block diagram showing the structure of theelectronic device 1000 according to an embodiment; and FIGS. 7A and 7Bare schematic perspective views showing an electronic device 1000according to an embodiment of the disclosure.

Referring to FIG. 6 , the electronic device 1000 may include a processor1010, a memory apparatus 1020, a storage apparatus 1030, an input/outputapparatus 1040, a power supply 1050, and a display apparatus 1060. Thedisplay apparatus 1060 may correspond to the display apparatus 1 of FIG.1 . The electronic device 1000 may further include various ports thatcommunicate with a video card, a sound card, a memory card, a USBapparatus, or the like, or that are capable of communicating with othersystems.

In one embodiment, as shown in FIG. 7A, the electronic device 1000 maybe implemented as a television. In one embodiment, as shown in FIG. 7B,the electronic device 1000 may be implemented as a smartphone. However,these are illustrative examples of the electronic device 1000, andembodiments of the disclosure are not limited thereto.

According to various embodiments of the disclosure, a display apparatusthat is capable of preventing or reducing the deterioration of imagequality during a manufacturing process or use and a method ofmanufacturing the display apparatus are provided.

However, the above-described effects are an example, and the effects ofthe embodiments will be described in detail with reference to thefollowing description.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments. While one or more embodiments have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope asdefined by the following claims.

What is claimed is:
 1. A method of manufacturing a display apparatus,the method comprising: forming a conductive layer on a substrate;forming a preliminary insulating pattern on the conductive layer;forming an insulating pattern by developing with a first solution; andtreating the insulating pattern with a second solution, wherein thepreliminary insulating pattern comprises a first material, the firstmaterial being a siloxane-based alkali soluble polymer, the firstsolution comprises a nitrogen compound, the second solution comprisesHF, the first material is different from the nitrogen compound, theinsulating pattern comprises a first region and a second region, thesecond region is between the conductive layer and the first region, andthe concentration of the nitrogen compound is reduced from the firstregion to the second region.
 2. The method of claim 1, wherein thesiloxane-based alkali soluble polymer comprises a repeating unitrepresented by Formula 2:

in Formula 2, L₂₁ and L₂₂ is each independently C(R₂₃)(R₂₄) or O—Si—O,a21 and a22 is each independently be 0, 1, 2, or 3, X₂₁ is O or O—Si—O,b21 is 1, 2, or 3, and R₂₁ to R₂₄ is each independently selected fromhydrogen, a hydroxyl group, a substituted or unsubstituted C₁-C₂₀ alkylgroup, a substituted or unsubstituted C₃-C₁₀ cycloalkyl group, asubstituted or unsubstituted C₆-C₃₀ aryl group, and a substituted orunsubstituted C₇-C₃₀ aralkyl group.
 3. The method of claim 1, whereinthe nitrogen compound is represented by Formula 1:NR₁R₂R₃OH  <Formula 1> in Formula 1, R₁ to R₃ is each independentlyselected from hydrogen, a substituted or unsubstituted C₁-C₂₀ alkylgroup, a substituted or unsubstituted C₆-C₃₀ aryl group, and asubstituted or unsubstituted C₇-C₃₀ aralkyl group.
 4. The method ofclaim 3, wherein the nitrogen compound includes tetramethylammoniumhydroxide (TMAH), tetraethylammonium hydroxide (TEAH),tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide(TBAH), benzyltrimethylammonium hydroxide, benzyltriethylammoniumhydroxide, or any combination thereof.
 5. The method of claim 1, whereinthe second solution comprises a buffer oxide etchant (BOE).
 6. Themethod of claim 1, wherein an amount of the first material in the firstregion is greater than an amount of the first material in the secondregion.
 7. The method of claim 6, wherein a ratio of the amount of thefluorine compound in the first region to the amount of the fluorinecompound in the second region is from about 10:1 to about 10,000:1. 8.The method of claim 6, wherein the amount of HF in the insulatingpattern is less than about 1 wt %.
 9. The method of claim 6, wherein theamount of the nitrogen compound in the insulating pattern is less thanabout 1 wt %.
 10. The method of claim 6, wherein a ratio of thethickness of the first region to the thickness of the second region isfrom about 1:10 to about 1:1,000.
 11. The method of claim 1, wherein theconductive layer includes aluminum (Al), platinum (Pt), palladium (Pd),silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd),iridium (Ir), and chromium (Cr), lithium (Li), calcium (Ca), molybdenum(Mo), titanium (Ti), tungsten (W), copper (Cu), or any combinationthereof.
 12. The method of claim 1, wherein the conductive layer is asingle layer or multiple layers.
 13. The method of claim 1, wherein theconductive layer has a three-layered Mo/Al/Mo, Mo/Al/Ti, or Ti/Al/Tistructure.
 14. The method of claim 13, wherein the top of the conductivelayer comprises molybdenum (Mo).
 15. The method of claim 1, wherein theinsulating pattern comprises the opening that exposes a portion of theconductive layer.
 16. The method of claim 15, further comprising, priorto the treating, forming a pixel electrode on the insulating pattern,wherein the pixel electrode is electrically connected to the conductivelayer.
 17. The method of claim 15, further comprising, after thetreating, forming a pixel electrode on the insulating pattern, whereinthe pixel electrode is electrically connected to the conductive layer.